型号/品牌/封装
品类/描述
库存
价格(含税)
资料
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品类: 晶体管描述: 氮化镓HEMT脉冲功率晶体管3.1 - 3.5 GHz频段，峰值120W ， 300US脉冲， 10 ％占空比 GaN HEMT Pulsed Power Transistor 3.1 - 3.5 GHz, 120W Peak, 300us Pulse, 10% Duty37821-9￥3807.122010-24￥3772.511825-49￥3755.206750-99￥3737.9016100-149￥3720.5965150-249￥3703.2914250-499￥3685.9863≥500￥3668.6812 -
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品类: 晶体管描述: 氮化镓对SiC耗尽型晶体管技术内部匹配 GaN on SiC Depletion-Mode Transistor Technology Internally Matched34271-9￥7887.891010-24￥7816.182925-49￥7780.328950-99￥7744.4748100-149￥7708.6208150-249￥7672.7667250-499￥7636.9127≥500￥7601.0586 -
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品类: 晶体管描述: 氮化镓对SiC耗尽型晶体管技术内部匹配 GaN on SiC Depletion-Mode Transistor Technology Internally Matched51961-9￥7887.891010-24￥7816.182925-49￥7780.328950-99￥7744.4748100-149￥7708.6208150-249￥7672.7667250-499￥7636.9127≥500￥7601.0586 -
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品类: 晶体管描述: 氮化镓HEMT脉冲功率晶体管2.7 - 3.1 GHz的峰值30W ， 500US脉冲，占空比为10％ GaN HEMT Pulsed Power Transistor 2.7 - 3.1 GHz, 30W Peak, 500us Pulse, 10% Duty Cycle95451-9￥2407.053010-24￥2385.170725-49￥2374.229650-99￥2363.2884100-149￥2352.3473150-249￥2341.4061250-499￥2330.4650≥500￥2319.5238
